Defect generation and recovery in high-k HfO<sub>2</sub>/SiO<sub>2</sub>/Si stack fabrication
نویسندگان
چکیده
Abstract The defect generation and recovery are studied in a high- k HfO 2 /SiO /Si stack for MOSFETs, at each fabrication step. is fabricated well-established manner, via chemical oxidation SiO interfacial layer atomic deposition layer, followed by post-deposition annealing (PDA), O plasma treatment, forming gas (FGA). Throughout the fabrication, carrier lifetime measured monitoring defects stack. measurements indicate that generated formation as well PDA whereas those mostly recovered FGA.
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ژورنال
عنوان ژورنال: Applied Physics Express
سال: 2023
ISSN: ['1882-0786', '1882-0778']
DOI: https://doi.org/10.35848/1882-0786/acdc82